EJS12P230
EJS12P230
EJS12P230
Part Number:
EJS12P230
Category:
-
Manufacturer:
Description:
12V P-Channel Trench Power MOSFE
Encapsulation:
Package:
Tape & Reel (TR)
Quantity:
10000
RoHS Status:
Supported
Share:
PDF:
RFQ
Stock
MOQ: 1
Qty
Price
Total
1+
$0.39
$0.39
20+
$0.37
$7.4
50+
$0.34
$17
100+
$0.32
$32
1000+
$0.3
$300
3000+
$0.28
$840
Part Status
Active
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Supplier Device Package
-
FET Feature
-
Grade
-
Qualification
-
FET Type
P-Channel
Vgs(th) (Max) @ Id
-
Power Dissipation (Max)
-
Technology
-
Vgs (Max)
±12V
Rds On (Max) @ Id, Vgs
-
Current - Continuous Drain (Id) @ 25°C
6A
Drive Voltage (Max Rds On, Min Rds On)
-
Package / Case
SOT-23
Latest Products
TW048U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.048 (T
TW027U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.027 (T
TW083U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.083 (T
CDMS24760-170 SL
Central Semiconductor Corp
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24740-170 SL
Central Semiconductor Corp
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24780-170 SL
Central Semiconductor Corp
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24720-170 SL
Central Semiconductor Corp
1700V THROUGH-HOLE MOSFET N-CHAN
SL3134K
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 150MW 1 N-CHANNEL SOT-