E3M0900170J-TR
Part Number:
E3M0900170J-TR
Category:
-
Manufacturer:
Description:
SIC, MOSFET, 900M, 1700V, TO-263
Encapsulation:
Package:
Cut Tape (CT)
Quantity:
0
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$7.46
$7.46
10+
$5.01
$50.1
100+
$3.61
$361
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Current - Continuous Drain (Id) @ 25°C
4.4A (Tc)
Power Dissipation (Max)
41W (Tc)
Supplier Device Package
TO-263-7
Drive Voltage (Max Rds On, Min Rds On)
15V
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Vgs (Max)
+19V, -8V
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 15 V
Rds On (Max) @ Id, Vgs
1.25Ohm @ 1.99A, 15V
Vgs(th) (Max) @ Id
4.2V @ 550µA
Input Capacitance (Ciss) (Max) @ Vds
202 pF @ 1.2 kV
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