E3M0900170D
Part Number:
E3M0900170D
Category:
-
Manufacturer:
Description:
SIC, MOSFET, 900M, 1700V, TO-247
Encapsulation:
Package:
Tube
Quantity:
363
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$7.46
$7.46
30+
$4.24
$127.2
120+
$3.53
$423.6
510+
$3.01
$1535.1
1020+
$2.82
$2876.4
2010+
$2.67
$5366.7
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Package / Case
TO-247-3
Current - Continuous Drain (Id) @ 25°C
4.4A (Tc)
Power Dissipation (Max)
41W (Tc)
Supplier Device Package
TO-247-3
Drive Voltage (Max Rds On, Min Rds On)
15V
Drain to Source Voltage (Vdss)
1700 V
Technology
SiC (Silicon Carbide Junction Transistor)
Vgs (Max)
+19V, -8V
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 15 V
Rds On (Max) @ Id, Vgs
1.25Ohm @ 1.99A, 15V
Input Capacitance (Ciss) (Max) @ Vds
202 pF @ 1.2 kV
Vgs(th) (Max) @ Id
4.5V @ 550µA
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