CP361R-CEDM7001-CT
CP361R-CEDM7001-CT
CP361R-CEDM7001-CT
Part Number:
CP361R-CEDM7001-CT
Category:
-
Description:
100mA,20V Bare die,14.173 X 14.1
Encapsulation:
Package:
Tray
Quantity:
50545
RoHS Status:
Supported
Share:
RFQ
Stock
MOQ: 400
Qty
Price
Total
400+
$1.43
$572
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
FET Feature
-
Grade
-
Qualification
-
Power Dissipation (Max)
-
Operating Temperature
-65°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)
Drain to Source Voltage (Vdss)
20 V
Package / Case
Die
Supplier Device Package
Die
Vgs(th) (Max) @ Id
900mV @ 250µA
Vgs (Max)
10V
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4V
Rds On (Max) @ Id, Vgs
3Ohm @ 10mA, 4V
Gate Charge (Qg) (Max) @ Vgs
566 pC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
4 pF @ 3 V
Latest Products
TW048U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.048 (T
TW027U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.027 (T
TW083U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.083 (T
CDMS24760-170 SL
Central Semiconductor Corp
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24740-170 SL
Central Semiconductor Corp
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24780-170 SL
Central Semiconductor Corp
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24720-170 SL
Central Semiconductor Corp
1700V THROUGH-HOLE MOSFET N-CHAN
SL3134K
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 150MW 1 N-CHANNEL SOT-