CGD65A055S2-T07
CGD65A055S2-T07
CGD65A055S2-T07
Part Number:
CGD65A055S2-T07
Category:
-
Manufacturer:
Description:
650V GAN HEMT, 55MOHM, DFN8X8. W
Encapsulation:
Package:
Cut Tape (CT)
Quantity:
657
RoHS Status:
Supported
Share:
PDF:
RFQ
Stock
MOQ: 1
Qty
Price
Total
1+
$18.23
$18.23
10+
$12.91
$129.1
100+
$11.95
$1195
Part Status
Active
Mounting Type
Surface Mount
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
27A (Tc)
Drain to Source Voltage (Vdss)
650 V
FET Feature
Current Sensing
Drive Voltage (Max Rds On, Min Rds On)
12V
Technology
GaNFET (Gallium Nitride)
Vgs (Max)
+20V, -1V
Supplier Device Package
16-DFN (8x8)
Package / Case
16-PowerVDFN
Rds On (Max) @ Id, Vgs
77mOhm @ 2.2A, 12V
Vgs(th) (Max) @ Id
4.2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 12 V
Latest Products
TW048U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.048 (T
TW027U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.027 (T
TW083U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.083 (T
CDMS24760-170 SL
Central Semiconductor Corp
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24740-170 SL
Central Semiconductor Corp
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24780-170 SL
Central Semiconductor Corp
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24720-170 SL
Central Semiconductor Corp
1700V THROUGH-HOLE MOSFET N-CHAN
SL3134K
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 150MW 1 N-CHANNEL SOT-