CC-C2-B15-0322
Part Number:
CC-C2-B15-0322
Category:
-
Manufacturer:
Description:
SiC Power MOSFET 1200V 12A
Encapsulation:
Package:
Bulk
Quantity:
5
RoHS Status:
Supported
PDF:
Stock
MOQ: 5
Qty
Price
Total
5+
$7.7
$38.5
10+
$6.6
$66
100+
$6.05
$605
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Current - Continuous Drain (Id) @ 25°C
12A (Ta)
Operating Temperature
-40°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
1200 V
Supplier Device Package
TO-247
Package / Case
TO-247-4
Drive Voltage (Max Rds On, Min Rds On)
15V
Technology
SiCFET (Silicon Carbide)
Vgs(th) (Max) @ Id
3.2V @ 5mA
Vgs (Max)
+15V, -5V
Rds On (Max) @ Id, Vgs
135mOhm @ 10A, 15V
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
1810 pF @ 200 V
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