GSJG80R420
GSJG80R420
GSJG80R420
零件编号:
GSJG80R420
产品分类:
-
制造商:
描述:
MOSFET, N-CH, SINGLE, 12.00A, 80
封装:
包装:
Tube
数量:
395
RoHS 状态:
支持
分享:
PDF:
库存
起订量:1
数量
价格
总价
1+
$3.03
$3.03
80+
$1.39
$111.2
160+
$1.26
$201.6
560+
$1.07
$599.2
1040+
$0.99
$1029.6
2000+
$0.93
$1860
5040+
$0.89
$4485.6
安装类型
Through Hole
零件状态
Active
场效应晶体管类型
N-Channel
技术
MOSFET (Metal Oxide)
驱动电压(最大导通电阻,最小导通电阻)
10V
场效应晶体管特性
-
等级
-
认证
-
工作温度
-55°C ~ 150°C (TJ)
连续漏极电流 (Id) @ 25°C
12A (Tc)
漏极至源极电压 (Vdss)
800 V
栅极电荷 (Qg) (最大值) @ Vgs
30 nC @ 10 V
最大栅源电压
±30V
封装 / 外壳
TO-251-3 Short Leads, IPAK, TO-251AA
最大功耗
104W (Tc)
导通电阻(最大值)@漏极电流,栅源电压
420mOhm @ 6A, 10V
供应商器件封装
TO-251
Vgs(th) (Max) @ Id 阈值电压(最大值)@ 漏极电流
4.6V @ 250µA
输入电容 (Ciss) (最大值) @ Vds
1130 pF @ 100 V
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