连续漏极电流 (Id) @ 25°C
75A (Tc)
技术
SiC (Silicon Carbide Junction Transistor)
驱动电压(最大导通电阻,最小导通电阻)
15V, 18V
导通电阻(最大值)@漏极电流,栅源电压
45mOhm @ 30A, 18V
输入电容 (Ciss) (最大值) @ Vds
3015 pF @ 400 V
栅极电荷 (Qg) (最大值) @ Vgs
125 nC @ 400 V
Vgs(th) (Max) @ Id 阈值电压(最大值)@ 漏极电流
2.2V @ 40mA (Typ)