QSD6HCS65U
Part Number:
QSD6HCS65U
Category:
-
Manufacturer:
Description:
SiC 6AMP 650V Schottky Barrier D
Encapsulation:
Package:
Tube
Quantity:
3000
RoHS Status:
Supported
PDF:
Stock
MOQ: 100
Qty
Price
Total
100+
$1.05
$105
500+
$0.94
$470
1000+
$0.83
$830
Mounting Type
Through Hole
Part Status
Active
Grade
Automotive
Qualification
AEC-Q101
Operating Temperature - Junction
-55°C ~ 175°C
Package / Case
TO-247-2
Supplier Device Package
TO-247-2
Technology
SiC (Silicon Carbide) Schottky
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Voltage - Forward (Vf) (Max) @ If
1.6 V @ 6 A
Current - Average Rectified (Io)
21A
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Reverse Leakage @ Vr
15 µA @ 650 V
Capacitance @ Vr, F
421pF @ 0V, 1MHz
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