Operating Temperature - Junction
-55°C ~ 175°C
Technology
SiC (Silicon Carbide) Schottky
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Average Rectified (Io)
21A
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Reverse Leakage @ Vr
36 µA @ 650 V
Supplier Device Package
TO-220I-2