Mounting Type
Through Hole
Operating Temperature
-40°C ~ 175°C (TJ)
Configuration
2 N-Channel (Half Bridge)
Technology
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
190A
Rds On (Max) @ Id, Vgs
5.56mOhm @ 190A, 18V
Vgs(th) (Max) @ Id
4.55V @ 60mA
Gate Charge (Qg) (Max) @ Vgs
420nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds
10100pF @ 850V
Package / Case
11-PowerDIP Module (2.091", 53.10mm)
Supplier Device Package
PG-MDIP-11-1