ECB2R8M12YM3
Part Number:
ECB2R8M12YM3
Category:
-
Manufacturer:
Description:
SIC, MODULE, 2.8M, 1200V, 152MM,
Encapsulation:
Package:
Box
Quantity:
2
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$1372.25
$1372.25
Part Status
Active
Mounting Type
Chassis Mount
Supplier Device Package
-
FET Feature
-
Grade
-
Qualification
-
Package / Case
Module
Operating Temperature
-40°C ~ 175°C (TJ)
Technology
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Rds On (Max) @ Id, Vgs
3.7mOhm @ 450A, 15V
Configuration
6 N-Channel (Three Phase Inverter)
Current - Continuous Drain (Id) @ 25°C
545A
Vgs(th) (Max) @ Id
3.6V @ 125mA
Gate Charge (Qg) (Max) @ Vgs
1272nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
38500pF @ 800V
Power - Max
1.485kW (Tj)
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