CBB011M12GM4
Part Number:
CBB011M12GM4
Category:
-
Manufacturer:
Description:
SIC, MODULE, 11M, 1200V, 48 MM,
Encapsulation:
Package:
Box
Quantity:
11
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$251.96
$251.96
18+
$215.88
$3885.84
Part Status
Active
Mounting Type
Chassis Mount
Supplier Device Package
-
FET Feature
-
Grade
-
Qualification
-
Package / Case
Module
Operating Temperature
-40°C ~ 150°C (TJ)
Configuration
4 N-Channel (Full Bridge)
Technology
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
100A (Tj)
Rds On (Max) @ Id, Vgs
14.9mOhm @ 100A, 15V
Vgs(th) (Max) @ Id
4V @ 28mA
Gate Charge (Qg) (Max) @ Vgs
405nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
10.1pF @ 800V
Power - Max
292W (Tj)
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