IRFD9123
Part number
IRFD9123
Product Category
Single FETs, MOSFETs
Manufacturer
Harris Corporation
Description
MOSFET P-CH 100V 1A 4DIP
Encapsulation
Tube
Packing
Quantity
19441
RoHS status
NO
Share
PDF:
Inventory
base.lang_mini : 317
Quantity
Price
Total price
317
$1.05
$332.85
Part Status
Obsolete
Mounting Type
Through Hole
Operating Temperature
-
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Vgs(th) (Max) @ Id
4V @ 250µA
FET Feature
-
Grade
-
Qualification
-
FET Type
P-Channel
Supplier Device Package
4-HVMDIP
Package / Case
4-DIP (0.300", 7.62mm)
Current - Continuous Drain (Id) @ 25°C
1A (Ta)
Power Dissipation (Max)
-
Rds On (Max) @ Id, Vgs
600mOhm @ 600mA, 10V
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
390 pF @ 25 V
Newest products
Vishay Siliconix
MOSFET N-CH 100V 5.6A TO220AB
Vishay Siliconix
MOSFET P-CH 100V 4A TO220AB
Vishay Siliconix
MOSFET P-CH 200V 560MA 4DIP
Vishay Siliconix
MOSFET N-CH 500V 8A TO220AB
Vishay Siliconix
MOSFET N-CH 100V 1A 4DIP
Vishay Siliconix
MOSFET P-CH 60V 600MA 4DIP
Vishay Siliconix
MOSFET N-CH 200V 600MA 4DIP
Vishay Siliconix
MOSFET P-CH 100V 700MA 4DIP