HUF76629D3S
Part number
HUF76629D3S
Product Category
Single FETs, MOSFETs
Manufacturer
Harris Corporation
Description
MOSFET N-CH 100V 20A TO252AA
Encapsulation
Tube
Packing
Quantity
2058
RoHS status
NO
Inventory
base.lang_mini : 326
Quantity
Price
Total price
326
$1.01
$329.26
Part Status
Obsolete
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Vgs (Max)
±16V
Power Dissipation (Max)
110W (Tc)
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 10 V
Supplier Device Package
TO-252 (DPAK)
Rds On (Max) @ Id, Vgs
52mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds
1285 pF @ 25 V
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