FF06100G
Part number
FF06100G
Product Category
Single FETs, MOSFETs
Manufacturer
fastSiC
Description
SICFET N-CH 650V 20.6A PDFN8x8
Encapsulation
Tape & Reel (TR)
Packing
Quantity
1804
RoHS status
NO
PDF：
Inventory
base.lang_mini : 1
Quantity
Price
Total price
1
$8.99
$8.99
10
$3.29
$32.9
100
$3.07
$307
3000
$2.99
$8970
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Drain to Source Voltage (Vdss)
650 V
Power Dissipation (Max)
83W (Tc)
Technology
SiCFET (Silicon Carbide)
Package / Case
4-PowerTSFN
Current - Continuous Drain (Id) @ 25°C
20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 400 V
Vgs (Max)
18V
Supplier Device Package
4-PDFN (8x8)
Rds On (Max) @ Id, Vgs
100mOhm @ 10A, 18V
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 15 V
Vgs(th) (Max) @ Id
2.2V @ 14mA
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