EPC8009
Part number
EPC8009
Product Category
Single FETs, MOSFETs
Manufacturer
EPC
Description
GANFET N-CH 65V 4A DIE
Encapsulation
Cut Tape (CT)
Packing
Quantity
15642
RoHS status
NO
Inventory
base.lang_mini : 1
Quantity
Price
Total price
1
$5.06
$5.06
10
$3.35
$33.5
100
$2.37
$237
500
$2.2
$1100
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Grade
-
Qualification
-
Power Dissipation (Max)
-
Vgs(th) (Max) @ Id
2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)
5V
Operating Temperature
-40°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
4A (Ta)
Package / Case
Die
Supplier Device Package
Die
Drain to Source Voltage (Vdss)
65 V
Technology
GaNFET (Gallium Nitride)
Vgs (Max)
+6V, -4V
Gate Charge (Qg) (Max) @ Vgs
0.45 nC @ 5 V
Rds On (Max) @ Id, Vgs
130mOhm @ 500mA, 5V
Input Capacitance (Ciss) (Max) @ Vds
52 pF @ 32.5 V
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