EPC2010C
Part number
EPC2010C
Product Category
Single FETs, MOSFETs
Manufacturer
EPC
Description
GANFET N-CH 200V 22A DIE OUTLINE
Encapsulation
Cut Tape (CT)
Packing
Quantity
4756
RoHS status
NO
Inventory
base.lang_mini : 1
Quantity
Price
Total price
1
$8.77
$8.77
10
$5.96
$59.6
100
$4.59
$459
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Grade
-
Qualification
-
Part Status
Not For New Designs
Drain to Source Voltage (Vdss)
200 V
Power Dissipation (Max)
-
Drive Voltage (Max Rds On, Min Rds On)
5V
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
Die
Supplier Device Package
Die
Current - Continuous Drain (Id) @ 25°C
22A (Ta)
Gate Charge (Qg) (Max) @ Vgs
5.3 nC @ 5 V
Technology
GaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id
2.5V @ 3mA
Vgs (Max)
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds
540 pF @ 100 V
Rds On (Max) @ Id, Vgs
25mOhm @ 12A, 5V
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