TH58BVG3S0HBAI4 Memory_HYF-Group_capacitor_Inductor_Potentiometer_Photoelectric device

Part number：	TH58BVG3S0HBAI4
Product classification：	Memory
Manufacturer：	Toshiba Memory America, Inc. (Kioxia America, Inc.)
Description：	8GB SLC BENAND 24NM BGA 9X11 1.
Encapsulation：
Packing：	Tray
Quantity：	210
RoHS status：	YES
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Part number：

TH58BVG3S0HBAI4

Product classification：

Memory

Manufacturer：

Toshiba Memory America, Inc. (Kioxia America, Inc.)

Description：

8GB SLC BENAND 24NM BGA 9X11 1.

Encapsulation：

Packing：

Tray

Quantity：

210

RoHS status：

YES

Product parameters

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TYPE	DESCRIPTION
Mfr	Toshiba Memory America, Inc. (Kioxia America, Inc.)
Series	-
Package	Tray
Product Status	ACTIVE
Package / Case	63-VFBGA
Mounting Type	Surface Mount
Memory Size	8Gbit
Memory Type	Non-Volatile
Operating Temperature	-40°C ~ 85°C (TA)
Voltage - Supply	2.7V ~ 3.6V
Technology	FLASH - NAND (SLC)
Memory Format	FLASH
Supplier Device Package	63-TFBGA (9x11)
Write Cycle Time - Word, Page	25ns
Memory Interface	Parallel
Access Time	20 ns
Memory Organization	1G x 8

Alternative models

                                          TH58BVG3S0HBAI4                                        

                                          铠侠-KIOXIA                                        

                                        BENAND (Built-in ECC SLCNAND)                                      